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BFG193
NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz
4
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance

3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG193
Maximum Ratings Parameter
Marking BFG193 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 80 10 600 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 87 C 1)
mA mW C
105
K/W
1
Jun-27-2001
BFG193
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-27-2001
BFG193
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz |S21e|2 13.5 8 Gma 15.5 10 F 1.3 2.1 Ceb 2 Cce 0.4 Ccb 0.6 0.9 fT 6 8 typ. max.
Unit
GHz pF
dB
1G ma
= |S21 / S12 | (k-(k2-1)1/2 )
3
Jun-27-2001
BFG193
Total power dissipation Ptot = f (TS )
700 mW 600 550 500
P tot
450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 C 150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
K/W
Ptotmax / PtotDC
-
10 2
10 1
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Jun-27-2001
BFG193
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
1.3
pF
9.0
GHz 10V
1.1 1.0 7.0
5V
Ccb
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1.0 0.1 0.0 0 4 8 12 16
V
fT
6.0 5.0 4.0 3.0
1V 3V
2V
2.0
0.7V
22
0.0 0
10
20
30
40
50
60
70 mA
90
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
20
dB
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
12
10V dB 5V 3V
16
10V 5V
G
G
14
3V
8
2V
12
2V
6
10 4 8
1V 1V
2 6
0.7V 0.7V
4 0
10
20
30
40
50
60
70 mA
90
0 0
10
20
30
40
50
60
70 mA
90
IC
IC
5
Jun-27-2001
BFG193
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
18
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
35
IC=30mA
dB
0.9GHz 8V 0.9GHz dBm 5V 1.8GHz
14 12
G
IP 3
25
10
1.8GHz
3V
8 20 6 4 2 0 0 10 0
2V
15
1V
2
4
6
8
V
12
10
20
30
40
50
60
mA
80
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
35
Power Gain |S21|2= f(f)
V CE = Parameter
32
dB
IC=30mA
dB
IC =30mA
26 25
22
G
S21
20 18 14 15 10 10
10V 2V 1V 0.7V
6 2
10V 2V 1V 0.7V
5
0 0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
-2 0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
f
6
Jun-27-2001

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